maximum ratings: (t a =25c) symbol units collector-emitter voltage v ces 70 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5.0 v collector current i c 1.0 a power dissipation (each transistor) p d 1.0 w power dissipation (total package) p d 2.5 w operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c) symbol test conditions min max units i cbo v cb =40v 500 na bv ceo i c =10ma 50 v bv ces i c =100a 70 v bv ebo i e =10a 5.0 v v ce(sat) i c =500ma, i b =50ma 0.45 v v be(sat) i c =500ma, i b =50ma 0.8 1.0 v h fe v ce =1.0v, i c =100ma 40 h fe v ce =2.0v, i c =500ma 30 f t v ce =10v, i c =50ma, f=100mhz 200 mhz c ob v cb =10v, i e =0, f=1.0mhz 10 pf c ib v eb =0.5v, i c =0, f=1.0mhz 80 pf MPQ3725A npn silicon quad transistor to-116 case central semiconductor corp. tm r0 (5-december 2007) description: the central semiconductor MPQ3725A type is comprised of four independant silicon npn transistors mounted in a 14-pin dip case, designed for core driver applications. marking code: full part number
central semiconductor corp. tm to-116 case - mechanical outline MPQ3725A npn silicon quad transistor r0 (5-december 2007) marking code: full part number pin configuration lead code: 1) collector q1 8) collector q3 2) base q1 9) base q3 3) emitter q1 10) emitter q3 4) nc 11) nc 5) emitter q2 12) emitter q4 6) base q2 13) base q4 7) collector q2 14) collector q4
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